2T0C IGZO-based DRAM opens doors to high-density 3D DRAM and embedded DRAM

IMEC's new capacitor-less IGZO-DRAM technology is a potential disruptor to the traditional DRAM roadmap, offering a solution to the scaling limitations of conventional 1T1C DRAM bit cells. This new approach uses two thin-film transistors (2T) made of indium-gallium-zinc-oxide (IGZO) and no capacitor (0C).

​Key advantages of the IGZO-DRAM technology include:

​Improved Power Efficiency and Data Retention: IGZO transistors have an extremely low off-current, which significantly reduces the need for frequent refreshing. This leads to a substantial decrease in power consumption, addressing one of the major challenges of scaling traditional DRAM.

​Enhanced Manufacturability and Cost-Effectiveness: Unlike silicon, IGZO can be processed at lower temperatures, making it compatible with existing back-end-of-line (BEOL) processes. This simplified manufacturing process could potentially lower production costs.

​Enabling Advanced Architectures: The capacitor-less design allows for more compact bit cells, which in turn enables new, higher-density DRAM architectures. This includes stacking the memory array on top of the periphery logic and "true 3D" stacking, which could lead to a significant increase in memory density.

​Addressing Reliability Concerns: While reliability issues, such as positive bias temperature instability (PBTI), have been a concern for the industry, IMEC has made significant progress in understanding and modeling these effects to ensure the reliability of their IGZO-based transistors.